| PART |
Description |
Maker |
| K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| F-137 |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
| F-137G |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| AS6C62256A AS6C62256A-70PIN |
Common data inputs and data outputs
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor ...
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| RC288DPL RCV288DPL RC288DPI RC288DPI-D RC288DPL-D |
V.34 Data/V.17 Fax/Voice Modem Data Pumps
|
N.A.
ETC[ETC]
|
